High Temperature Grown Graphene on SiC Studied by Raman and FTIR Spectroscopy
| Autor: | Marco Eckstein, Bernd Hähnlein, Manuel Auge, Georg Woltersdorf, Jörg Pezoldt |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Analytical chemistry Infrared spectroscopy 02 engineering and technology Epitaxy 01 natural sciences law.invention chemistry.chemical_compound symbols.namesake law 0103 physical sciences Silicon carbide General Materials Science Fourier transform infrared spectroscopy 010306 general physics Atmospheric pressure Graphene Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Mechanics of Materials symbols 0210 nano-technology Raman spectroscopy Graphene nanoribbons |
| Zdroj: | Materials Science Forum. 897:727-730 |
| ISSN: | 1662-9752 |
| Popis: | Epitaxial graphene on semiinsulating silicon carbide was grown using a high temperature method at atmospheric pressure in argon atmosphere. The temperature dependence of the layer quality was analysed using Raman and infrared spectroscopy. It is demonstrated that infrared spectroscopy can be used as a versatile tool to access the layer count and the quality of the epitaxial grown graphene on silicon carbide. The results obtained by infrared spectroscopy correlate with the Raman measurements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|