Hydrogenated Microcrystalline Silicon Film Growth by Inductively Coupled Plasma–Chemical Vapor Deposition on ZrO2Gate Dielectric for Thin Film Transistors

Autor:	Chang−Wook Han, Sun Jin Yun, In Jae Chung, Sang−Myeon Han, Jung Wook Lim, Joong−Hyun Park, Min-Koo Han, Ki Yong Kim
Rok vydání:	2006
Předmět:	Atomic layer deposition Materials science Physics and Astronomy (miscellaneous) Thin-film transistor Gate dielectric Layer by layer General Engineering Analytical chemistry General Physics and Astronomy Chemical vapor deposition Combustion chemical vapor deposition Thin film Layer (electronics)
Zdroj:	Japanese Journal of Applied Physics. 45:4365-4369
ISSN:	1347-4065 0021-4922
Popis:	Hydrogenated microcrystalline silicon (µc-Si:H) film was fabricated by inductively coupled plasma–chemical vapor deposition (ICP–CVD) at 150 °C on ZrO2 gate dielectric which was made by atomic layer deposition (ALD) method. µc-Si:H film with very thin incubation layer less than 10 nm was deposited on ZrO2 film. Polycrystalline ZrO2 played a role of crystal seed layer to enhance the crystalline fraction of µc-Si:H film. Surface roughness of ZrO2 film increased as deposition temperature of ZrO2 was increased. Rougher surface of ZrO2 film provided nucleation site of µc-Si:H film at early growth stage to reduce the thickness of the incubation layer. The crystalline fraction of µc-Si:H film depended on crystallinity of ZrO2. When µc-Si:H film was deposited on ZrO2 of 100 and 50 nm thickness at 250 °C, (200) and (111) peak intensity was increased respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fc60b6a79227073df10dc2b582e4efaa https://doi.org/10.1143/jjap.45.4365 Zobrazit plný text záznamu