Influence of External Gate Resistance on UIS Capability in Superjunction MOSFET
| Autor: | Wataru Hirasawa, Suzuki Noriaki, Yamaguchi Takeshi, Asada Takeshi, Masaaki Honda, Yamaji Mizue, Watanabe Yuji, Arai Daisuke |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Physics Phosphorus concentration 020208 electrical & electronic engineering Gate resistance Doping Charge (physics) 02 engineering and technology 01 natural sciences Impact ionization Electric field 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Atomic physics |
| Zdroj: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2019.8757613 |
| Popis: | We investigated the UIS capability for superjunction MOSFETs with respect to the external gate resistance (R g ) and the charge imbalance (CIB) by experiments as well as device simulations. Measured UIS capability depends not only on the CIB but also on the R g . Higher UIS capability was exhibited for small R g than for large R g as deviating the CIB to $\mathbf{Q}_{\mathbf{n}} while the difference by R g was small for $\mathbf{Q}_{\mathbf{n}}=\mathbf{Q}_{\mathbf{p}}$ . The device simulations indicated that the device destruction by UIS is assumed to be related to the re-conduction of channel current (I ch ). When the R g is small, Ich turns off once while V ds has not increased enough to generate impact ionization. This transient behavior is different from the one for large R g . After that, Ich re-conduction occurs due to the high electric field beneath the MOS gate for $\mathbf{Q}_{\mathbf{n}}=\mathbf{Q}_{\mathbf{p}}$ but suppressed for $\mathbf{Q}_{\mathbf{n}} . The graded doping for N-column which reduces phosphorus concentration near the surface helps to suppress the re-conduction and improves the UIS capability for small R g condition. |
| Databáze: | OpenAIRE |
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