A synchrotron Si2p and As3d core level study of the As-terminated Si(001) surface oxidation
| Autor: | C. Poncey, Giancarlo Panaccione, M. Sauvage-Simkin, Fausto Sirotti, J.C. Boulliard, François Rochet, H. Roulet, Georges Dufour, Wagner N. Rodrigues |
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| Rok vydání: | 1995 |
| Předmět: |
Silicon
Analytical chemistry chemistry.chemical_element Condensed Matter Physics Synchrotron Electronic Optical and Magnetic Materials law.invention Metal chemistry X-ray photoelectron spectroscopy law visual_art Monolayer Materials Chemistry Ceramics and Composites visual_art.visual_art_medium Sublimation (phase transition) Arsenic oxide Arsenic |
| Zdroj: | Journal of Non-Crystalline Solids. 187:40-44 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(95)00108-5 |
| Popis: | The resistance of the As-terminated Si(001) surface to oxidation in O 2 is the subject of this study. Photoemission spectra of As3d and Si2p core levels excited with synchrotron radiation reveals that spectral changes are evident, simultaneously for As and Si, only from ∼10 12 L (Langmuir) on, in stark contrast with a previous report indicating a saturation coverage in the 400–2000 L range. Oxidation proceeds slowly, as dimerized As remain intact (∼24%) up to exposures of ∼10 13 L. In the oxidized areas, the four Si oxidation states (indicative of subsurface oxidation) and three As oxidation states plus metallic arsenic show up. This suggests a reduction of the arsenic oxide by silicon. Arsenic losses are also observed, probably via sublimation of As 4 O 6 molecules. |
| Databáze: | OpenAIRE |
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