Spatial structures formed during high-temperature vacuum annealing of diamond-like film deposited on a silicon substrate

Autor:	M. B. Tsetlin, Alexei Zakharov, Ingolf Lindau, M. N. Mikheeva, Konstantin I. Maslakov
Rok vydání:	2009
Předmět:	Materials science Microscope Silicon Annealing (metallurgy) business.industry Diamond chemistry.chemical_element Synchrotron radiation engineering.material Synchrotron Surfaces Coatings and Films law.invention Crystallography Carbon film chemistry law engineering Optoelectronics Thin film business
Zdroj:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 3:752-755
ISSN:	1819-7094 1027-4510
DOI:	10.1134/s1027451009050152
Popis:	The process of an ultrahigh vacuum annealing of a diamond-like carbon film deposited on a silicon substrate has been studied in situ using a photoemission microscope mounted at the MAX-lab synchrotron’s radiation source. After the annealing the film was examined ex situ using an atomic force microscope. It is revealed that the graphitization of the film occurs and round formations of several microns in size with a core of ∼0.2 µm in size appear on its surface at the temperature exceeding 1000°C. Photoemission images of these formations have shown the presence of silicon on their surface. Apparently, the interaction between the carbon film and silicon substrate begins in the middle of the formation and spreads to the adjacent region at the following stage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fb9c1639414c0f7aa82b03d11f44be87 https://doi.org/10.1134/s1027451009050152 Zobrazit plný text záznamu Full text from SpringerLink