Al-Induced Crystallization of Amorphous Silicon Film
| Autor: | Ping Sheng Zhou, Linjun Wang, Jing Jin, Xiao Lei Qu, Weimin Shi, Jun Qian |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Amorphous silicon
Materials science Annealing (metallurgy) Energy-dispersive X-ray spectroscopy Nanocrystalline silicon Analytical chemistry General Medicine engineering.material law.invention Full width at half maximum chemistry.chemical_compound Polycrystalline silicon chemistry law Plasma-enhanced chemical vapor deposition engineering Crystallization |
| Zdroj: | Applied Mechanics and Materials. :292-296 |
| ISSN: | 1662-7482 |
| DOI: | 10.4028/www.scientific.net/amm.271-272.292 |
| Popis: | Al-induced crystallization (AIC) method was used for obtaining polycrystalline silicon (poly-Si) film on glass substrate. The films with glass/a-Si:H/Al structure were fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and magnetic sputtering. Then the samples were sent to perform annealing treatments during the different temperatures and time. The experimental results demonstrate that a highly crystallized poly-Si sample can be achieved by annealing at 480°C for 2h. The crystalline fraction (Xc) of the sample is about 99.1% and the Full Width at Half Maximum (FWHM) is 4.89cm-1. The average grain size of this sample is about 250nm. The energy dispersive spectroscopy (EDS) measurement confirms that the residual Al in the film is very little. |
| Databáze: | OpenAIRE |
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