Design methodology and applications of SiGe BiCMOS cascode opamps with up to 37-GHz unity gain bandwidth
Autor: | Timothy O. Dickson, Sorin P. Voinigescu, R. Beerkens, Theodoros Chalvatzis |
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Rok vydání: | 2005 |
Předmět: | |
Zdroj: | IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.. |
DOI: | 10.1109/csics.2005.1531841 |
Popis: | A new technique to design highly stable operational amplifiers with maximum unity gain bandwidth, UGB, is developed. It relies on biasing MOSFETs at the peak f/sub MAX/ current density. Several opamps, based on MOS-HBT SiGe BiCMOS cascodes, were designed and fabricated with UGB as high as 37 GHz. This record bandwidth is achieved with active p-MOSFET loads. A 1.3-GHz bandpass filter was implemented using two fully differential opamps with common-mode-feedback. |
Databáze: | OpenAIRE |
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