Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

Autor:	R.K. Kaneriya, A N Bhattacharya, Gunjan Rastogi, R.B. Upadhyay, P. K. Basu
Rok vydání:	2019
Předmět:	Modeling and simulation chemistry.chemical_compound Materials science chemistry business.industry Terahertz radiation General Earth and Planetary Sciences Optoelectronics Gallium nitride High-electron-mobility transistor Electrical and Electronic Engineering Condensed Matter Physics business
Zdroj:	Radio Science. 54:1172-1180
ISSN:	1944-799X 0048-6604
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f9a66dd5a80a9cde2bb21770618ac978 https://doi.org/10.1029/2019rs006844 Zobrazit plný text záznamu Plný text