33.1: A 3.2-in. LCD Panel using Amorphous Silicon TFT Formed with Novel Selective and Dispersive Transfer Technique
Autor: | Yutaka Onozuka, Keiji Sugi, Shuichi Uchikoga, Tsuyoshi Hioki, Kentaro Miura, Masahiko Akiyama, Masao Tanaka, Yujiro Hara |
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Rok vydání: | 2005 |
Předmět: |
Amorphous silicon
Fabrication Liquid-crystal display Materials science business.industry ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION Hardware_PERFORMANCEANDRELIABILITY Substrate (electronics) Oxide thin-film transistor law.invention chemistry.chemical_compound chemistry Selective transfer law Thin-film transistor Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics business |
Zdroj: | SID Symposium Digest of Technical Papers. 36:1254 |
ISSN: | 0097-966X |
DOI: | 10.1889/1.2036231 |
Popis: | A novel formation process for TFT using our proposed novel selective transfer technique, which enables low cost TFT fabrication on a large and flexible substrate, is proposed. This technique is used to fabricate a 3.2-inch LCD Panel using amorphous silicon TFT transferred on glass substrate for the first time. |
Databáze: | OpenAIRE |
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