I−Vcharacteristics of co-planar metal-semiconductor-metal nanojunctions
| Autor: | V. Rousset, B. Rousset, Christian Joachim, Thierry Ondarçuhu |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Silicon
business.industry chemistry.chemical_element Conductance Insulator (electricity) Biasing Thermionic emission Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Optics chemistry Optoelectronics business Instrumentation Low voltage Electron-beam lithography |
| Zdroj: | The European Physical Journal Applied Physics. 3:21-28 |
| ISSN: | 1286-0050 1286-0042 |
| DOI: | 10.1051/epjap:1998199 |
| Popis: | Planar metal/semiconductor/metal (PMSM) junctions buried in a SiO2 layer are fabricated using electron beam lithography on a silicon sample. A technique of jump of pixels is used to obtain different sizes of junctions, the smallest having an inter-electrode distance of 5 nm. The current-voltage characteristics and the variation of the junction conductance with the temperature down to 8 K have been studied. At all sizes and for both polarities, the I−V curves correspond to the reverse characteristic of a metal/semiconductor contact. At low bias voltage, the influence of a thin insulator interfacial layer between the metal and the semiconductor has been pointed out. For these junctions, a non-linear low voltage I−V characteristics is observed before the large voltage thermionic emission regime. For the smallest junctions obtained without interfacial oxide layer, a linear I−V characteristic is recovered at low voltage. Their conductance can be lowered by decreasing the temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|