| Autor: |
Uwe Hollerbach, Steven A. Orszag, Nicholas K. Eib, Eytan Barouch |
| Rok vydání: |
1993 |
| Předmět: |
|
| Zdroj: |
Advances in Resist Technology and Processing X. |
| ISSN: |
0277-786X |
| Popis: |
An investigation of the dissolution behavior of an acid catalyzed deep ultraviolet (DUV) positive resist has been completed. The immersion develop dissolution rate as a function of dose and post exposure bake temperature was measured by Perkin Elmer Dissolution Rate Monitor (DRM) for single layer resist on a silicon substrate. A reaction-diffusion model has been built to describe the dependence of development rate on exposure dose and post exposure bake (PEB) time/temperature. A mixed diffusion model has been built to account for catalyst diffusion and quenching. Developed images have been compared with simulated image quality, line width, and process window.© (1993) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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