Non-ideal effects improvement of SF6 plasma treated hafnium oxide film based on electrolyte–insulator–semiconductor structure for pH-sensor application
| Autor: | Chao-Sung Lai, Jer-Chyi Wang, Chi-Fong Ai, Chia-Ming Yang, Kuan-I Ho, Tseng-Fu Lu, Chung-Po Chang |
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| Rok vydání: | 2010 |
| Předmět: |
Semiconductor structure
Chemistry Analytical chemistry Insulator (electricity) Plasma treatment Plasma Electrolyte Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Hafnium oxide Electrical and Electronic Engineering Thin film Safety Risk Reliability and Quality |
| Zdroj: | Microelectronics Reliability. 50:742-746 |
| ISSN: | 0026-2714 |
| Popis: | A novel HfO 2 thin film with SF 6 plasma treatment as ion selective membrane on electrolyte–insulator–semiconductor structure for pH-sensor was proposed. The sensing characteristics on hydrogen ion detection and the non-ideal effects including drift effect, hysteresis phenomenon, and responses on interference ions were all presented in this article. The results show that the slight increase of pH-sensitivity is achieved and the non-ideal effects are improved after SF 6 plasma treatment. It is finally concluded that the HfO 2 thin film with SF 6 plasma treatment as ion selective membrane is suitable for pH detection and the optimum condition is 5 min for SF 6 plasma treatment. |
| Databáze: | OpenAIRE |
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