Effects of gas pressure on the synthesis and photoluminescence properties of Si nanowires in VHF-PECVD method

Autor:	Habib Hamidinezhad, Yussof Wahab, Zulkurnain Abdul-Malek
Rok vydání:	2012
Předmět:	Photoluminescence Materials science Nanowire Analytical chemistry General Chemistry Substrate (electronics) Amorphous solid symbols.namesake Transmission electron microscopy Plasma-enhanced chemical vapor deposition symbols General Materials Science Raman spectroscopy Spectroscopy
Zdroj:	Applied Physics A. 108:739-744
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s00339-012-6960-0
Popis:	Silicon nanowires (SiNWs) were grown on an Au-coated Si(111) substrate at various gas pressures by very high frequency plasma enhanced chemical vapor deposition via the vapor–liquid–solid mechanism. The synthesized SiNWs were characterized by field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, high-resolution transmission electron microscopy, Raman spectroscopy and photoluminescence (PL). The SiNWs were sharp needle-shaped and possessed highly crystalline core and oxide amorphous shell. As the gas pressure increases from 70 mtorr to 85 mtorr, the average diameter of the SiNWs decreases from 250 nm to 70 nm. Furthermore, the density of the nanowires increases with the gas pressure. The PL spectra revealed a peak at about 400 nm and a broadband emission at about 700 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f865be3718d0c539dd75120e652547d6 https://doi.org/10.1007/s00339-012-6960-0 Zobrazit plný text záznamu Plný text ve formátu PDF