How to achieve efficiencies exceeding 22% with multicrystalline n-type silicon solar cells
| Autor: | Armin Richter, Stefan W. Glunz, Patricia Krenckel, Florian Schindler, Ralph Müller, Jan Benick, Martin C. Schubert, Stephan Riepe, Bernhard Michl |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Area fraction Materials science Silicon N type silicon business.industry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention chemistry law 0103 physical sciences Solar cell Electronic engineering Optoelectronics Grain boundary Crystallization 0210 nano-technology business Common emitter Silicon solar cell |
| Zdroj: | Energy Procedia. 124:777-780 |
| ISSN: | 1876-6102 |
| DOI: | 10.1016/j.egypro.2017.09.086 |
| Popis: | In this contribution, we demonstrate a route for efficiencies exceeding 22% with n-type multicrystalline (mc) silicon solar cells based on the TOPCon cell concept featuring a boron-diffused front side emitter and a full-area passivating rear contact. By applying a “high-performance” (HP) crystallization process with an adapted seed structure in order to obtain an optimized grain boundary area fraction, we reduce recombination losses in the HP mc-Si material to a minimum. We discuss the electrical properties of the optimized n-type HP mc-Si, which features very low material-related efficiency losses of approximately 0.5% abs and, thus, enables an efficiency potential of 22.6% with regard to a cell limit of 23.1% of the TOPCon cell concept adapted for multicrystalline silicon. Results at the device level reveal a record efficiency of 21.9%, which is the highest efficiency reported for a multicrystalline silicon solar cell. Finally, we discuss the deviations between the predicted efficiency potential and the solar cell results. |
| Databáze: | OpenAIRE |
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