Transmission electron microscopy of InSb following alpha particle irradiation

Autor:	H. L. Gaigher, B.J.E. Van Tonder, E. Friedland
Rok vydání:	1989
Předmět:	Nuclear and High Energy Physics Radiation Materials science Alpha particle Condensed Matter Physics Molecular physics Ion Ion implantation Transmission electron microscopy Radiation damage General Materials Science Irradiation Dislocation Nuclear chemistry
Zdroj:	Radiation Effects and Defects in Solids. 108:53-59
ISSN:	1029-4953 1042-0150
DOI:	10.1080/10420158908217869
Popis:	Radiation damage in InSb as a result of the implantation of helium ions, has been investigated. The results of transmission electron microscopic investigations of InSb samples implanted at different temperatures are presented. The observed radiation damage varied from a slight increase in the dislocation density as a result of heated implantations, to the total loss of crystallinity after implantation at 77 K. The nature of the dislocation loops which form due to room temperature implantation, was determined. The relation between the TEM observations and RBS/channeling results, as well as the development of radiation damage in InSb due to light ion irradiation, are also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f78451541785ab99d284c13a47ecd4a3 https://doi.org/10.1080/10420158908217869 Zobrazit plný text záznamu