Structure and properties of heteroepitaxial Pb(Zr0.35Ti0.65)O3/SrRuO3multilayer thin films on SrTiO3(100) prepared by MOCVD and RF sputtering
| Autor: | G. R. Bai, Duane Dimos, Husam N. Alshareef, Roseann Csencsits, Z. Li, C. M. Foster, R. Hiskes, L. A. Wills |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
business.industry Analytical chemistry Chemical vapor deposition Dielectric Coercivity Combustion chemical vapor deposition Condensed Matter Physics Ferroelectric capacitor Electronic Optical and Magnetic Materials Control and Systems Engineering Sputtering Materials Chemistry Ceramics and Composites Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Thin film business |
| Zdroj: | Integrated Ferroelectrics. 10:31-38 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584589508012261 |
| Popis: | Epitaxial SrRuO3 thin films were deposited on SrTiO3 (100) substrates by RF sputtering for use as bottom electrodes and epitaxial buffer layers. On these conductive substrates, epitaxial Pb(Zr0.35Ti0.65)O3 (PZT) thin films were deposited by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD), transmission electron microscopy (TEM) and optical waveguiding were used to characterize the phase, refractive index, and film thickness of the deposited films. The epitaxial PZT films were c-axis oriented and contained -19.7% volume fraction of 90° domains. Ferroelectric hysteresis and dielectric measurements of epitaxial PZT ferroelectric capacitor structures formed using sputtered ITO top electrodes showed: a remanent polarization of 51.8 Ω/cm2, a coercive field of 54.9 kV/cm, a dielectric constant of 410, a bipolar resistivity of ∼5.8x109 Ω-cm at a field of 275 kV/cm, and a breakdown strength of >400 kV/cm. The cyclic fatigue behavior of the films showed a strong dependenc... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|