| Autor: |
P. Swarnkar, Abhishek Kumar Misra, Jayeeta Biswas, Saurabh Lodha, Piyush Bhatt |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). |
| DOI: |
10.1109/istdm.2014.6874651 |
| Popis: |
This work compares the impact of implantation temperature ranging from cryogenic (-100 °C) to hot (400°C) on the performance of n + /p Ge junctions. Cryogenic implantation on bulk, planar Ge followed by a 400°C rapid thermal anneal leads to higher activation. lower junction depth, lower sheet resistance and lower junction leakage compared to RT and hot (400°C) implantation. The improved junction performance translates into higher ON current and lower OFF leakage for cryo implanted planar Ge n-MOSFETs. On the other hand, high dose/energy cryogenic implants on Ge fins are shown to degrade fin recrystallization due to the absence of a crystalline core because of increased amorphization. Crystallinity of as-implanted Ge fins indicates that hot implantation could be a more viable n + /p junction formation process for Ge FinFET technology. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
