Gate-tunable Thermoelectric Effects in a Graphene/WS2 van der Waals Heterostructure
| Autor: | Hyebin Jeong, Minsol Son, Junho Lee, Nojoon Myoung, Injip Sim |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
High Energy Physics::Lattice General Physics and Astronomy 02 engineering and technology 01 natural sciences law.invention Condensed Matter::Materials Science chemistry.chemical_compound symbols.namesake Tunnel junction law Condensed Matter::Superconductivity Seebeck coefficient 0103 physical sciences Thermoelectric effect Physics::Atomic and Molecular Clusters Tungsten diselenide 010306 general physics Condensed matter physics Graphene Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology chemistry Dirac fermion symbols van der Waals force 0210 nano-technology |
| Zdroj: | Journal of the Korean Physical Society. 73:940-944 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.3938/jkps.73.940 |
| Popis: | Thermoelectric effects of Dirac fermions through a van der Waals (vdW) heterostructure consisting of graphene and tungsten diselenide (WS2) are theoretically investigated. When the lattice temperature of the top graphene layer differs from that of the bottom graphene layer, thermally excited Dirac fermions can be transferred through the WS2 layer, generating tunnel current. This thermoelectric tunnel current shows drastic changes in its characteristics as a consequence of gatevoltage tuning. The thermoelectric power of the proposed graphene–WS2 vdW heterostructure is characterized by examining the Seebeck coefficient. |
| Databáze: | OpenAIRE |
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