3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode
| Autor: | Takashi Ishigaki, Akio Shima, Yasuhiro Shimamoto, Haruka Shimizu, Fujita Ryuusei, Masakazu Sagawa, Yuki Mori, Shintaroh Sato, Naoki Tega, Kenji Kobayashi, Kumiko Konishi |
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| Rok vydání: | 2017 |
| Předmět: |
Mean time between failures
Materials science business.industry Mechanical Engineering 020208 electrical & electronic engineering Doping Electrical engineering Gate insulator JFET 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Reliability (semiconductor) Mechanics of Materials Electric field Power module 0202 electrical engineering electronic engineering information engineering Optoelectronics General Materials Science 0210 nano-technology business Diode |
| Zdroj: | Materials Science Forum. 897:493-496 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.897.493 |
| Popis: | We investigated improvement ways of to overcome these reliability issues in a 3.3 kV 4H-SiC DMOSFET. JFET doping with (i) narrow width and (ii) deeper depth than that of the p-well region successfully reduced the electric field in the gate insulator and the on-voltage simultaneously. We achieved a low Ron of 26 mΩcm2 at a Vg of +15 V and 150 °C. And highly reliable chips of 0.1 Fit were also achieved both at a positive and negative gate bias of +15 V/ -8 V with MTTF of intrinsic lifetime over 20 years at 3 MV/cm. BTI characterstics both in positive and negative biases also proved reliability over 20 years. The body diode showed stable behavior under forward current operation which is suitable for an external diode-less power module. |
| Databáze: | OpenAIRE |
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