BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas
| Autor: | Abdallah Ougazzaden, C. Sartel, Simon Gautier, Nabila Maloufi, Jérôme Martin, François Jomard |
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| Rok vydání: | 2007 |
| Předmět: |
Chemistry
Analytical chemistry chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Nitrogen Inorganic Chemistry Secondary ion mass spectrometry Metal Template reaction visual_art Materials Chemistry visual_art.visual_art_medium Metalorganic vapour phase epitaxy Boron Group 2 organometallic chemistry |
| Zdroj: | Journal of Crystal Growth. 298:316-319 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2006.10.072 |
| Popis: | BGaN materials with good structural quality and surface morphology have been successfully grown on GaN template substrates by low pressure metal organic vapour phase epitaxy. TEB and NH3 were used as precursors of boron and nitrogen, respectively. All the growths were performed under 100% N 2 process gas. Boron concentration was estimated by HRXD measurements combined with SIMS analysis. Single-crystal layers BGaN with B content as high as 3.6% have been obtained. |
| Databáze: | OpenAIRE |
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