Voltage Balancing of Four Series-Connected SiC MOSFETs under 2 kV Bus Voltage using Active dv/dt Control
| Autor: | Jun Wang, Emma Raszmann, Igor Cvetkovic, Keyao Sun, Rolando Burgos, Dushan Boroyevich |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry 05 social sciences Electrical engineering 020207 software engineering Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Integrated circuit Blocking (statistics) Network topology law.invention chemistry.chemical_compound Capacitor chemistry law Logic gate MOSFET Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Silicon carbide 0501 psychology and cognitive sciences business 050107 human factors Voltage |
| Zdroj: | 2019 IEEE Energy Conversion Congress and Exposition (ECCE). |
| DOI: | 10.1109/ecce.2019.8912870 |
| Popis: | This paper demonstrates the voltage balancing performance and switching behavior of four series-connected SiC MOSFET devices. Both multilevel and two-level topologies are capable of achieving higher blocking voltages in high-power converter applications. Compared to multilevel topologies, twolevel switching topologies are of interest due to less complex circuitry, higher density, and simpler control techniques. In order to balance the voltage between series-connected MOSFETs, device turn-off speeds are dynamically controlled on each gate-driver with active gate control. The implementation of the active gate control technique is described in this paper. Experimental results of the voltage balancing behavior across four non-commercial 1.7 kV SiC MOSFET devices in series (2 kV total dc bus voltage) with the selected active dv/dt control scheme are shown. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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