Semiconductor pressure sensor based on FET structure
| Autor: | Jan M. Lysko, M.A. Krzycki, Ryszard Jachowicz |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Electro-optical sensor Capacitive sensing Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Capacitive displacement sensor Pressure sensor Proximity sensor Hardware_INTEGRATEDCIRCUITS Optoelectronics ComputerSystemsOrganization_SPECIAL-PURPOSEANDAPPLICATION-BASEDSYSTEMS Current sensor Silicon bandgap temperature sensor Inductive sensor business |
| Zdroj: | Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9). |
| DOI: | 10.1109/imtc.1994.351833 |
| Popis: | As a next step in capacitive pressure sensor development, a new sensor structure based on field effect transistor has been proposed. The sensor build up on active FET structure, has a big advantage in reference to the semiconductor capacitive sensors. Its voltage output signal (or current signal) can be simply measured in contrary to relatively difficult measurements of capacitance. An other sensor advantage is because of one side wafer processing during sensors fabrication. The sensor construction as well as details of sensor fabrication technology are described. The results of computer simulation of the sensor are discussed. High sensor pressure sensitivity and relatively low sensor dependence on temperature are very important measurement features of the PS-FET sensors. > |
| Databáze: | OpenAIRE |
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