New two-dimensional Ge–Sb–Te semiconductors with high photovoltaic performance for solar energy conversion

Autor: Yu Gan, Naihua Miao, Jian Zhou, Zhimei Sun
Rok vydání: 2022
Předmět:
Zdroj: Journal of Materials Chemistry C. 10:16813-16821
ISSN: 2050-7534
2050-7526
DOI: 10.1039/d2tc04085a
Popis: Three new stable semiconducting Ge–Sb–Te monolayers exhibit high visible-light absorbance (105–106 cm−1) and photovoltaic efficiency (26–30% at 0.1 μm), considerably larger than the currently dominant commercial photovoltaic semiconductor Si.
Databáze: OpenAIRE