Deep-level recombination spectroscopy in GaP light-emitting diodes

Autor:	S. V. Bulyarskii, N. S. Grushko, M. O. Vorob’ev, A. V. Lakalin
Rok vydání:	1999
Předmět:	Materials science Deep level business.industry Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Optics Semiconductor law Optoelectronics Wafer business Spectroscopy Recombination Light-emitting diode
Zdroj:	Semiconductors. 33:668-671
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1187753
Popis:	Deep-level parameters determined from an analysis of the differential coefficients of the forward-bias current-voltage curves are compared in the example of commercial GaP LEDs. It is shown that these parameters are suitable for deep-center diagnostics. The proposed measurements can be performed on semiconductor wafers in the industrial environment without sealing or dividing into individual crystals.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f62f1fd284e2ed9f3fb173370b9e5e86 https://doi.org/10.1134/1.1187753 Zobrazit plný text záznamu Plný text ve formátu PDF