Density functional study of diamond epitaxy on the (111) and (100) surfaces of copper
| Autor: | V.G. Zavodinsky |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Mechanical Engineering
Material properties of diamond chemistry.chemical_element Diamond General Chemistry engineering.material Epitaxy Copper Electronic Optical and Magnetic Materials Crystallography Adsorption chemistry Ab initio quantum chemistry methods Monolayer Materials Chemistry engineering Electrical and Electronic Engineering Thin film |
| Zdroj: | Diamond and Related Materials. 15:1201-1205 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2005.04.005 |
| Popis: | Ab initio calculations show that epitaxial diamond films can be grown on copper substrates with geometry parameters close to those of bulk diamond. The mean cohesive energy for C(100) films are larger than that for C(111) films; however the C(111) films are more stable than the C(100) ones with respect to separation from the copper substrate. The latter fact explains why the preferable observed orientation of diamond microcrystallites on copper is the one. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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