Execution of energy efficient detection of hydrogen using Pt/WO x /SiC semiconductor structure

Autor:	V. V. Grigor’ev, V. V. Zuev, V. Yu. Fominskii, M. V. Demin, V. N. Nevolin, R. I. Romanov
Rok vydání:	2015
Předmět:	Materials science Physics and Astronomy (miscellaneous) Hydrogen business.industry chemistry.chemical_element Nanotechnology Thermal conduction Transverse plane Planar chemistry Optoelectronics Electric current Current (fluid) Thin film business Voltage
Zdroj:	Technical Physics Letters. 41:824-827
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785015090138
Popis:	It has been shown that, at elevated temperatures (∼350°C), the most distinct response to H2 from the thin film structure Pt/WO x /SiC is achieved at registration of change in voltage for the reverse branch of a current-voltage characteristic. Comparative studies of electric current conduction through the structure and over its surface (with deposited Pt film) have led to the conclusion that a change in properties of the Pt/WO x and WO x /SiC interfaces under action of H2 mostly determines efficiency of response of the structure in the case of “transverse” measuring geometry. In the case of a 2% concentration of H2 in air the voltage shift for the reverse branch at a current of ∼10 μA reached 5 V against 2 V on the forward branch and “planar” geometry of measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f4d7cfd42aef7496d0ae6fd5f0922279 https://doi.org/10.1134/s1063785015090138 Zobrazit plný text záznamu Plný text ve formátu PDF