| Autor: |
Chong-Cheng Fu, James P. Shiely, Qiliang Yan, Bradley J. Falch, Min Bai, Ruoping Wang, Lawrence S. Melvin |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.600547 |
| Popis: |
As an important resolution enhancement technique (RET), alternating aperture phase shift masks (AAPSM) has been widely adopted in 90 nm technology node and beyond. Mask topographical effect due to the 3D nature of the shifter features is becoming an increasingly important factor in lithography modeling. Rigorous 3D modeling of PSM is very computationally demanding thus impractical for full chip optical proximity correction (OPC). Here we introduce an alternative approach employing boundary layers to effectively approximate the 3D mask effect. We will present the model calibration versus real wafer data using the boundary layers and the corresponding OPC correction flow. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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