MOVPE growth of InGaAs on InP using tertiarybutylarsine

Autor:	W. Powazinik, M. Abdalla, D.G. Kenneson
Rok vydání:	1990
Předmět:	Electron mobility Materials science Photoluminescence business.industry Analytical chemistry chemistry.chemical_element Epitaxy Gallium arsenide chemistry.chemical_compound Full width at half maximum chemistry Optoelectronics Metalorganic vapour phase epitaxy business Carbon Arsenic
Zdroj:	International Conference on Indium Phosphide and Related Materials.
DOI:	10.1109/iciprm.1990.202996
Popis:	The growth by low-pressure metalorganic vapor phase epitaxy (MOVPE) of lattice-matched InGaAs on InP substrates using tertiarybutylarsine (TBA) as the arsenic source is reported. The grown layers were uniform in composition and are consistently n-type with low background carrier concentration (2-3*10/sup 15//cm/sup 3/). Room temperature mobility as high as 11200 cm/sup 2//V-s with a corresponding 77 K mobility of 57000 cm/sup 2//V-s was measured. Photoluminescence (20 K) gave a strong narrow peak (FWHM=3.1 meV) with no evidence of carbon incorporation. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f45d9a4711b2da7853ca5b094f8a0770 https://doi.org/10.1109/iciprm.1990.202996 Zobrazit plný text záznamu