Tantalum capping on platinum thin heater for selective area heating
| Autor: | Hyun Jae Kim, Woong Hee Jeong, Choong Hee Lee, Do-Kyung Kim, Tae Hyung Hwang, Tae Hoon Jeong |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon Metals and Alloys Tantalum Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Electromigration Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention symbols.namesake chemistry.chemical_compound chemistry Silicon nitride law Materials Chemistry symbols Crystallization Platinum Raman spectroscopy Layer (electronics) |
| Zdroj: | Thin Solid Films. 517:4127-4130 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2009.02.010 |
| Popis: | The thermal radiation which generated from the patterned Ta/Pt/Ta thin heater achieved a high temperature up to 1010 °C under applied current of 2.4 A. In order to reduce an electromigration at high current of 2 A, a Ta capping layer was placed on the Pt layer instead of conventional capping layer, such as SiNx and CoWP. Under the thermal radiation at the applied current of 2 A in the Ta/Pt/Ta thin heater, the Ta capping layer enhanced the lifetime of the Pt thin heater up to 5 h. A stamping process for the crystallization of a-Si was performed for 40 samples using the Ta/Pt/Ta thin heater. For all samples, a-Si has been selectively crystallized and Raman peaks were located near 519 cm − 1 . These results indicated that the thermal radiation of the Ta/Pt/Ta thin heater was maintained constantly due to the Ta capping. |
| Databáze: | OpenAIRE |
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