PLD growth of ZnO film free from deep level emission using (La,Sr)TiO3 substrate
| Autor: | Takeshi Kobayashi, Masanori Sugiura, Takuya Nakasaka, Yuu Nakashima |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Photoluminescence Deep level business.industry Exciton Non-blocking I/O Deep level emission General Physics and Astronomy Mineralogy Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films Pulsed laser deposition Optoelectronics Thin film business |
| Zdroj: | Applied Surface Science. :472-474 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(02)00372-0 |
| Popis: | This paper describes the pulsed laser deposition (PLD) technology of making ZnO thin films free from deep level emission (a problem of conventionaly grown ZnO films). A visible broad peak (deep level emission) is often seen in the ZnO photoluminescence (PL) spectrum and also a sharp exciton peak. ZnO films PLD-grown on La-doped (0.5%) SrTiO3 substrates were compared with those grown on SrTiO3 substrates. When grown on La-doped SrTiO3 substrate, the deep level emission disappeared almost completely. Even when (LaSr)TiO3 film was inserted between the ZnO film and SrTiO3 substrate, deep level emission was suppressed to a large extent. Using the present result, we fabricated a NiO/ZnO/LaxSr1−xTiO3 structure and characterized it. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect