Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist chemical vapor deposition
| Autor: | Akito Taguchi, Takumi Yamamoto, Kentaro Kaneko, Ken Goto, Takeyoshi Onuma, Tohru Honda, Yoshinao Kumagai, Shizuo Fujita, Tomohiro Yamaguchi |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 62:SF1023 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | The heteroepitaxial growth of In2O3 on a (0001) α-Al2O3 substrate was carried out using the mist chemical vapor deposition method. The concentrations of In2O3 powder in the source precursor solution varied between 0.025 and 0.250 mol l−1. An increase in the growth rate was observed with the increasing In2O3 powder concentration, and the highest growth rate of 4.2 μm h−1 was obtained at a powder concentration of 0.150 mol l−1. An improvement in the electrical properties was eventually observed, i.e. the lowest carrier concentration of 3.1 × 1017 cm−3 and the highest Hall mobility of 241 cm2 V−1 s−1 at room temperature were obtained at a powder concentration of 0.150 mol l−1. The temperature-dependent Hall effect measurement for the sample showed pronounced carrier freeze-out in a temperature range of 300–30 K, indicating that the α-In2O3 film had near-non-degenerate conductivity. |
| Databáze: | OpenAIRE |
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