Novel light trapping structure by alkaline etching using a Ge dot mask for crystalline Si solar cells
| Autor: | Yasuyoshi Kurokawa, Atsushi Hombe, Noritaka Usami |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Nanostructure Materials science Silicon business.industry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Wavelength Optics chemistry Etching (microfabrication) 0103 physical sciences Optoelectronics Wafer Crystalline silicon Dry etching Reactive-ion etching 0210 nano-technology business |
| Zdroj: | 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO). |
| DOI: | 10.1109/nano.2016.7751354 |
| Popis: | Novel light trapping structure was fabricated on crystalline silicon wafers by KOH etching using Ge dots as an etching mask. In this method, it is found that the density of Ge dots before etching is important for the density of nanostructure after etching. The depth and density of the nanostructure after etching can be controlled by changing the etching time. Reduction of reflectance was successfully confirmed in the samples with nanostructures. Control of size distribution of the nanostructures is the key to further reduction of the reflectance in the wide range of wavelength. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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