High resolution nanotopography characterization at die scale of 28nm FDSOI CMOS front-end CMP processes
| Autor: | C. Beitia, Maurice Rivoire, S. Gaillard, F. Bertin, F. Dettoni, O. Hinsinger |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Scale (ratio) business.industry Nanotechnology Interferometric microscopy Condensed Matter Physics Atomic and Molecular Physics and Optics Die (integrated circuit) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Characterization (materials science) Metrology Front and back ends CMOS Chemical-mechanical planarization Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 113:105-108 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2013.08.001 |
| Popis: | This work concerns high resolution topography characterization at die scale of 28nm FDSOI CMOS technology by interferometric microscopy. It shows that usual test boxes (T-boxes) in scribe line are not representative of the full die topography. Consequently, new parameters are needed in order to take full advantage of high resolution topography characterization at die scale. In that sense, it is observed in this study that coupling full die and die @s ranges can provide new and relevant information about the Chemical Mechanical Polishing (CMP) processes. Moreover, high resolution die topography data makes possible to characterize in-die impact of a structure on its neighborhood and evaluate the pattern density dependency of the CMP processes. |
| Databáze: | OpenAIRE |
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