| Autor: |
Yoshio Ohfuji, Yoshifumi Yabuki, Tomomi Sasaki, Shinroh Ikeda, Kenji Oikawa, Tsuyoshi Fujimoto, Shiro Uchida, Masao Ikeda, M. Takeya, Takashi Mizuno |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.479758 |
| Popis: |
This paper describes an improved laser structure for AlGaInN based blue-violet lasers (BV-LDs). The design realizes a small beam divergence angle perpendicular to the junction plane and high characteristic temperature wihtout significant increase in threshold current density (Jth) by optimizing the position of the Mg-doped layer and introducing an undoped AlGaN layer between the active layer and the Mg-doped electron-blocking layer. The mean time to failure (MTTF) of devices based on this design was found to be closely related to the dislocation density of ELO-GaN basal layer. Under 50 mW CW operation at 70°C, a MTTF of over 5000 h was realized whenthe dark spot density (indicative of dislocation density) is less than ~5×106 cm-2. Power consumption under 50mW CW operation at 70°C was approximately 0.33 W, independent of the dislocation density. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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