Radio frequency magnetron sputtering deposition of low-resistivity and broad-spectral transmission F and Al co-doped ZnO film with mobility exceeding 50 cm2 V−1 s−1
| Autor: | Xicheng Xie, Huarong Zhang, Xudong Meng, Xiaobo Zhang, Hailin Pei, Guoxi Zheng, Fu Yang, Yanfeng Wang, Bing Han |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Doping 02 engineering and technology Sputter deposition Photoelectric effect 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials 010309 optics Electrical resistivity and conductivity Sputtering 0103 physical sciences Transmittance Optoelectronics Electrical and Electronic Engineering Radio frequency magnetron sputtering 0210 nano-technology business |
| Zdroj: | Optik. 219:165105 |
| ISSN: | 0030-4026 |
| Popis: | Al and F co-doped ZnO (FAZO) films with low doping ratios were deposited on glass substrates via radiofrequency magnetron sputtering. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of the deposited films were systematically investigated. Good performance of the FAZO film, including a carrier concentration of 4.15 × 1020 cm−3, mobility of 37.35 cm2 V−1 s−1, resistivity of 4.03 × 10−4 Ω cm, and nearly 90 % average transmittance in the 400–1200 nm region, was obtained at 180 W. After annealing treatment, the photoelectric properties of the film were significantly improved, the mobility was enhanced to >50 cm2 V−1 s−1, the resistivity was reduced to ∼3.8 × 10−4 Ω cm, and the average transmittance between 400–1200 nm was increased to >91 %. The excellent electrical conductivity and wide-spectrum transparency indicated that the FAZO films have broad application prospects in wide-spectrum thin-film solar cells. |
| Databáze: | OpenAIRE |
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