Long-wavelength In/sub 0.53/Ga/sub 0.47/As metamorphic p-i-n photodiodes on GaAs substrates
| Autor: | P. J. Lemonias, G. Cueva, Ilesanmi Adesida, Jae-Hyung Jang, William E. Hoke, D.C. Dumka |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Substrate (electronics) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Gallium arsenide Photodiode law.invention chemistry.chemical_compound Responsivity chemistry law Optoelectronics Optical radiation Quantum efficiency Electrical and Electronic Engineering business Current density Dark current |
| Zdroj: | IEEE Photonics Technology Letters. 13:151-153 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | Metamorphic In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized. Their dark current, DC and RF performances were measured and compared for devices of different sizes. Typical dark current for 15-/spl mu/m-diameter devices was 600 pA under 5-V reverse bias, corresponding to a dark current density of 3.40/spl times/10/sup -4/ A/cm/sup 2/. Typical responsivity measured with 1.55-/spl mu/m optical radiation was 0.55 A/W corresponding to an external quantum efficiency of 44%. The electrical 3 dB bandwidths of the photodiodes with diameters smaller than 20 /spl mu/m were over 20 GHz. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|