| Autor: |
Seok-Woo Nam, Chang-Lyong Song, Hun-Young Lim, Sanghoon Lee, Jung-Hwan Kim, Jae-Duk Lee, Jai-Dong Lee, Woong Lee, Hyeon-deok Lee |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.. |
| Popis: |
We studied factors which affect cell Vth variation in the floating gate flash memory. By simulation and experiment, we showed that the shape of STI (shallow trench isolation) and the tunnel oxide thickness in the STI edge were the main control factors. For example, sharp and thin oxide in the STI edge caused an uncontrolled F-N gate current in the program or erase operation, which directly indicated the amount of threshold voltage in the flash memory. Furthermore, we found that tunnel oxide thinning was closely related to the activation energy in the oxidation process. Smaller activation energy resulted in better thinning and better cell Vth distribution. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
