Impurity diffusion and flicker fluctuations in charge-carrier mobility in semiconductors
| Autor: | A. V. Yakimov, V. B. Orlov |
|---|---|
| Rok vydání: | 1984 |
| Předmět: |
Quantum optics
Physics Nuclear and High Energy Physics Electron mobility Condensed matter physics business.industry Flicker Astronomy and Astrophysics Statistical and Nonlinear Physics Electronic Optical and Magnetic Materials Semiconductor Impurity Electrical resistivity and conductivity Charge carrier Electrical and Electronic Engineering Diffusion (business) business |
| Zdroj: | Radiophysics and Quantum Electronics. 27:1105-1109 |
| ISSN: | 1573-9120 0033-8443 |
| DOI: | 10.1007/bf01039226 |
| Popis: | The authors consider fluctuations in charge-carrier mobility due to diffusion of contaminating impurities and defects within a semiconductor volume. It is shown that this mechanism can lead to flicker fluctuations in charge-carrier concentration. It becomes possible to interpret the empirical Hooge-Kleinpenning-Vandamme relationship and certain other well known experimental data on the basis of the analysis performed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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