Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE
| Autor: | W. Li, B. Romanczyk, E. Akso, M. Guidry, N. Hatui, C. Wurm, W. Liu, P. Shrestha, H. Collins, C. Clymore, S. Keller, U. K. Mishra |
|---|---|
| Rok vydání: | 2022 |
| Zdroj: | 2022 International Electron Devices Meeting (IEDM). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|