Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation
| Autor: | Jonathan A. Pellish, Gyorgy Vizkelethy, Robert A. Reed, Bernd Heinemann, Paul W. Marshall, A. Appaswamy, Akil K. Sutton, Dieter Knoll, John D. Cressler, G.G. Fischer, S.D. Phillips, Bernd Tillack, Hans Gustat, R.M. Diestelhorst |
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| Rok vydání: | 2009 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Heterojunction bipolar transistor Transistor Doping law.invention Silicon-germanium chemistry.chemical_compound Nuclear Energy and Engineering chemistry law Optoelectronics Wafer Isolation (database systems) Electrical and Electronic Engineering business Radiation hardening Common emitter |
| Zdroj: | IEEE Transactions on Nuclear Science. 56:3402-3407 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2009.2030801 |
| Popis: | We investigate a novel implementation of junction isolation to harden a 200 GHz SiGe:C HBT technology without deep trench isolation against single event effects. The inclusion of isolation is shown to have no effect on the dc or ac performance of the nominal device, and likewise does not reduce the HBTs inherent tolerance to TID radiation exposure on the order of a Mrad. A 69% reduction in total integrated charge collection across a slice through the center of the device was achieved. In addition, a 26% reduction in collected charge is reported for strikes to the center of the emitter. 3-D NanoTCAD simulations are performed on RHBD and control device models yielding a good match to measured results for strikes from the emitter center to 8 ?m away. This result represents one of the most effective transistor layout-level RHBD approaches demonstrated to date in SiGe. |
| Databáze: | OpenAIRE |
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