Impact of furnace nitridation time in N2O ambient on the quality of the Si/SiO2 system

Autor:	R. Le Bihan, Caterina Riva, Constantin Papadas, E. André-Benoit, Federico Pio
Rok vydání:	1994
Předmět:	Quality (physics) Materials science Si substrate Scientific method Metallurgy General Engineering Degradation (geology) Short duration
Zdroj:	Microelectronics Journal. 25:577-582
ISSN:	0026-2692
Popis:	The impact of the furnace nitridation time in N 2 O ambient on the quality of the Si/SiO 2 system is analyzed in detail. It is shown that, for a high temperature furnace nitridation process step, a long duration of nitridation may give rise to degradation phenomena for MOS structures grown on n-type Si, whereas this is not the case for MOS devices formed on p-type Si substrate. A qualitative model which explains this anomalous behaviour is also proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eedfe21319f77422f17ced6fd53d1c7d https://doi.org/10.1016/0026-2692(94)90043-4 Zobrazit plný text záznamu