| Autor: |
T Lammer, Albrecht Ehrmann, Reinhard Springer, Rainer Kaesmaier, A. Chalupka, Joerg Butschke, Ernst Haugeneder, Florian Letzkus, Frank-Michael Kamm, Hans Loeschner, Mathias Irmscher, Thomas Struck, Andreas Wolter |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching process. By means of FE analysis the different contributions may be classified. Some of the errors can be reduced if more stringent specifications of the SOI wafer are fulfilled, some of them may be reduced after pre-calculation. Reduction of the remaining placement errors can be achieved if specific means of an Ion Projection Lithography (IPL) tool are applied. These are mainly magnification and anamorphic corrections removing so-called global distortions. The remaining local distortions can be further reduced by applying the concept of thermal mask adjustment (THEMA). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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