Investigations on the Diffusion of Boron in SiGe Mixed Crystals

Autor:	N. V. Abrosimov, Wolfgang Bohne, Erik Strub, W.-D. Zeitz, Jörg Röhrich, J. Hattendorf
Rok vydání:	2004
Předmět:	inorganic chemicals Nuclear and High Energy Physics Materials science chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Crystallography Amplitude chemistry Chemical physics Interstitial defect Physical and Theoretical Chemistry Boron Saturation (chemistry)
Zdroj:	Hyperfine Interactions. 158:293-297
ISSN:	1572-9540 0304-3843
DOI:	10.1007/s10751-005-9047-x
Popis:	By studying the quadrupolar interaction of 12B in silicon-germanium mixed crystals with the β-NMR method, the boron-germanium pair was identified and the saturation amplitudes for boron in differently composed crystals were measured. The relative saturation amplitudes agree with statistical predictions. At low temperatures boron is preferentially implanted into stable interstitial sites. These sites are converted into substitutional sites by diffusion processes which take advantage of reorientation jumps.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ecef2c2777184483ed8e9d174cdc74c2 https://doi.org/10.1007/s10751-005-9047-x Zobrazit plný text záznamu Plný text ve formátu PDF