Growth of Ga x In1 − x Sb solid solution single crystals by the Czochralski method

Autor:	M. A. Rom, R. V. Ruban, G. N. Kozhemyakin, M. E. Golovkova
Rok vydání:	2009
Předmět:	Crystallography Materials science Czochralski method Analytical chemistry General Materials Science General Chemistry Dislocation Condensed Matter Physics Homogeneous distribution Solid solution
Zdroj:	Crystallography Reports. 54:712-716
ISSN:	1562-689X 1063-7745
DOI:	10.1134/s1063774509040294
Popis:	GaxIn1 − xSb solid solution single crystals (x = 0.03–0.09) have been grown. The dislocation density and electrophysical parameters are measured. A technique for the growth GaxIn1 − xSb single crystals by the Czochralski method with GaSb polycrystal feed is developed. The conditions for the growth Ga0.08In0.92Sb single crystals with a more homogeneous distribution of Ga along the bulk are determined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ebc86d689d25ff612a70ca9838192351 https://doi.org/10.1134/s1063774509040294 Zobrazit plný text záznamu Plný text ve formátu PDF