Nanoscale Growth Kinetics of Cu(In,Ga)Se2 Absorbers
| Autor: | Michael Stuckelberger, Barry Lai, Mariana I. Bertoni, Jörg Maser, Bradley West |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
In situ Materials science Kinetics Analytical chemistry chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Copper indium gallium selenide solar cells Copper Thermal expansion Surfaces Coatings and Films Electronic Optical and Magnetic Materials General Energy chemistry 0103 physical sciences Microscopy Physical and Theoretical Chemistry Thin film 0210 nano-technology |
| Zdroj: | The Journal of Physical Chemistry C. 122:22897-22902 |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | We investigate the kinetics of elemental segregation during the synthesis of Cu(In1−x,Gax)Se2 (CIGS) thin films via a rapid thermal growth process. Changes in elemental concentration are mapped rapidly via in situ X-ray fluorescence (XRF) microscopy. In situ XRF enables the quantification of Cu, In, Ga, and Se concentrations with 200 nm spatial resolution over a region of 7 μm × 7 μm, large enough to map multiple CIGS grains. Reacting elemental precursor stacks at 500, 550, and 600 °C, we find that copper is the driving force for α-CIGS phase formation at a rate of 17 nmol/cm2/min at 500 °C. Because of the thermal expansion of the substrate, cluster analysis and classification algorithms were employed to track compositionally similar regions over time and across samples measured at different temperatures. Beyond the direct application of these results for the optimization of CIGS manufacturing, these in situ experiments demonstrate the feasibility of quantitative compositional evaluation at the nanoscale ... |
| Databáze: | OpenAIRE |
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