A novel energy-efficient and high speed full adder using CNTFET
| Autor: | Asma Torkzadeh Mahani, Peiman Keshavarzian |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
0209 industrial biotechnology
Adder Engineering business.industry General Engineering Electrical engineering Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Propagation delay Energy consumption 021001 nanoscience & nanotechnology Carbon nanotube field-effect transistor 020901 industrial engineering & automation XNOR gate MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering 0210 nano-technology business Hardware_LOGICDESIGN Efficient energy use Electronic circuit |
| Zdroj: | Microelectronics Journal. 61:79-88 |
| ISSN: | 0026-2692 |
| Popis: | In the present paper, we will present two high speed, energy efficient and low power full adder circuits using gate diffusion input (GDI) cell, semi XOR/XNOR modules and carbon nanotube field effect transistors (CNTFET). Due to unique electrical and mechanical features of CNTFET, it can be chosen as an appropriate alternative to replace the metal oxide field effect transistors (MOSFET). In order to evaluate several figures of metric (FOM) including power consumption, energy consumption, propagation delay and energy delay product (EDP) using different voltage supplies, load capacitances, temperatures, frequencies and tubes, extensive experiments of proposed designs and previous works will be presented. Comparing to the previous works, simulation results of HSPICE illustrate the superiority of proposed designs regarding propagation delay and EDP. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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