Non-uniformly doped graded-gap AlxGa1−xAs X-ray detectors with high photovoltaic response

Autor:	L. Dapkus, K. Pozela, A. Silenas, Vida Juciene, V. Jasutis, Kevin M. Smith, J. Pozela
Rok vydání:	2002
Předmět:	Photocurrent Physics Nuclear and High Energy Physics X-ray absorption spectroscopy business.industry Detector Doping X-ray detector Biasing Optoelectronics business Instrumentation Sensitivity (electronics) Layer (electronics)
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 487:54-59
ISSN:	0168-9002
DOI:	10.1016/s0168-9002(02)00945-2
Popis:	Graded-gap Al x Ga 1− x As/GaAs X-ray detectors with photovoltaic response have been designed and fabricated. A charge collection efficiency of 100% has been achieved in an Al x Ga 1− x As layer with a thickness of 15 μm without application of any bias voltage to the layer. Experimentally, the measured sensitivity achieves 0.9 A/W. Amplification of the photocurrent takes place in the thin (15 μm) Al x Ga 1− x As layer, and an efficiency of 5×10 5 V/W is attained at an absorbed power of 10 −7 W. The possibilities of using the new detectors for observation of X-ray images are considered.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ea1f8e0c63b4a858192015b2b6a223e2 https://doi.org/10.1016/s0168-9002(02)00945-2 Zobrazit plný text záznamu Full Text from ScienceDirect