Nonlinear refraction and absorption in an InGaAsP waveguide containing an InGaAs single quantum well
| Autor: | Wilson Sibbett, D. J. Goodwill, Andrew C. Walker, D.T. Neilson, C. I. Johnston, J.E. Ehrlich |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry Physics::Optics Nonlinear optics Statistical and Nonlinear Physics Refraction Atomic and Molecular Physics and Optics Molecular electronic transition law.invention Wavelength law Attenuation coefficient Optoelectronics business Waveguide Refractive index Quantum well |
| Zdroj: | Journal of the Optical Society of America B. 10:492 |
| ISSN: | 1520-8540 0740-3224 |
| Popis: | Measurements have been made at wavelengths between 1486 and 1600 nm of nonlinear refraction and absorption in an InGaAs single quantum well centered in an InGaAsP waveguide. Band-edge resonant nonlinear refractive cross sections as large as σn = −5.0 × 10−20 cm3 have been deduced with a characteristic saturation carrier density of ~2 × 1013 cm−3. For all pulse lengths used (≤ 15 ms) the electronic transition nonlinearity appeared always to dominate any thermally induced refractive-index changes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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