Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors

Autor:	Nahid Sultan Al-Mamun, Maxwell Wetherington, Douglas E. Wolfe, Aman Haque, Fan Ren, Stephen Pearton
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronic Engineering. 262:111836
ISSN:	0167-9317
DOI:	10.1016/j.mee.2022.111836
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e974a05a8c154d1f6c90aa952972b12e https://doi.org/10.1016/j.mee.2022.111836 Zobrazit plný text záznamu Full Text from ScienceDirect