Thermal evolution of the chemical structure and properties of silicon oxides

Autor:	E. V. Sergeev, K. A. Aleksandrov, V. B. Kopylov
Rok vydání:	2008
Předmět:	chemistry.chemical_compound Silicon chemistry Singlet oxygen Excited state Relaxation (NMR) Thermal desorption chemistry.chemical_element General Chemistry Atmospheric temperature range Luminescence Photochemistry Heat capacity
Zdroj:	Russian Journal of General Chemistry. 78:868-875
ISSN:	1608-3350 1070-3632
DOI:	10.1134/s1070363208050058
Popis:	High-resolution IR spectroscopic study has shown that stepwise heating of samples of silicon oxides in the temperature range from 50 to 1000°C is accompanied by accumulation of electronically excited states in the skeletal Si-O bond system, as well as by formation of associates in the cationic and anionic sublattices. Stationary association process and cooperative interaction of the excited states give rise to IR luminescence and diamagnetic response which increases as the temperature rises. Accumulation of the excited states in the chemical structure and their relaxation, including that occurring due to thermal desorption of singlet oxygen, are characterized by nonmonotonic temperature dependence of the heat capacity.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e96f6a146d112f7597c7bae4e2ae63bc https://doi.org/10.1134/s1070363208050058 Zobrazit plný text záznamu Plný text ve formátu PDF